cascadable silicon bipolar mmic amplifier technical data features ? cascadable 50 w gain block ? 3 db bandwidth: dc to 3.6 ghz ? 8.0 db typical gain at 1.0 ghz ? 12.5 dbm typical p 1 db at 1.0 ghz ? unconditionally stable (k>1) ? low cost plastic package MSA-0485 85 plastic package description the MSA-0485 is a high perfor- mance silicon bipolar monolithic microwave integrated circuit (mmic) housed in a low cost typical biasing configuration c block c block r bias v cc > 7 v v d = 5.25 v rfc (optional) in out msa 4 1 2 3 plastic package. this mmic is designed for use as a general purpose 50 w gain block. typical applications include narrow and broad band if and rf amplifiers in commercial and industrial applications. the msa-series is fabricated using agilents 10 ghz f t , 25 ghz f max , silicon bipolar mmic process which uses nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance, uniformity and reliability. the use of an external bias resistor for temperature and current stability also allows bias flexibility.
2 MSA-0485 absolute maximum ratings parameter absolute maximum [1] device current 85 ma power dissipation [2,3] 500 mw rf input power +13 dbm junction temperature 150 c storage temperature C65 to 150 c thermal resistance [2,4] : q jc = 90 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 11.1 mw/ c for t c > 105 c. 4. see measurements section thermal resistance for more information. g p power gain (|s 21 | 2 ) f = 0.1 ghz db 8.3 f = 1.0 ghz 7.0 8.0 d g p gain flatness f = 0.1 to 2.5 ghz db 0.7 f 3 db 3 db bandwidth ghz 3.6 input vswr f = 0.1 to 2.5 ghz 1.6:1 output vswr f = 0.1 to 2.5 ghz 2.0:1 nf 50 w noise figure f = 1.0 ghz db 7.0 p 1 db output power at 1 db gain compression f = 1.0 ghz dbm 12.5 ip 3 third order intercept point f = 1.0 ghz dbm 25.5 t d group delay f = 1.0 ghz psec 125 v d device voltage v 4.2 5.25 6.3 dv/dt device voltage temperature coefficient mv/ c C8.0 note: 1. the recommended operating current range for this device is 30 to 70 ma. typical performance as a function of current is on the following page. electrical specifications [1] , t a = 25 c symbol parameters and test conditions: i d = 50 ma, z o = 50 w units min. typ. max. vswr
3 MSA-0485 typical scattering parameters (z o = 50 w , t a = 25 c, i d = 50 ma) freq. ghz mag ang db mag ang db mag ang mag ang 0.1 .21 177 8.4 2.63 175 C16.1 .156 2 .08 C16 0.2 .20 176 8.3 2.60 171 C16.2 .155 2 .08 C30 0.4 .20 172 8.2 2.57 163 C16.1 .156 3 .10 C54 0.6 .19 171 8.1 2.55 155 C16.2 .155 5 .13 C71 0.8 .19 168 8.1 2.54 146 C16.0 .158 6 .16 C83 1.0 .18 166 8.0 2.52 138 C15.7 .164 9 .18 C93 1.5 .16 167 7.8 2.46 117 C15.3 .171 11 .25 C116 2.0 .18 168 7.4 2.34 97 C14.6 .187 12 .29 C136 2.5 .21 173 6.9 2.21 83 C13.8 .204 16 .34 C150 3.0 .27 169 6.3 2.07 65 C13.4 .213 13 .38 C161 3.5 .33 161 5.7 1.92 48 C12.6 .234 9 .39 C172 4.0 .38 154 4.8 1.74 33 C12.3 .242 6 .37 C179 4.5 .42 145 4.1 1.59 18 C12.1 .249 3 .36 C174 5.0 .44 131 3.3 1.46 4 C11.7 .259 C3 .34 C165 a model for this device is available in the device models section. s 11 s 21 s 12 s 22 typical performance, t a = 25 c (unless otherwise noted) 0.1 0.3 0.5 1.0 3.0 6.0 0 2 4 6 8 10 12 g p (db) figure 1. typical power gain vs. frequency, t a = 25 c, i d = 50 ma. gain flat to dc frequency (ghz) v d (v) figure 2. device current vs. voltage. 0 20 40 60 80 i d (ma) 234567 1 t c = +85 c t c = +25 c t c = ?5 c i d (ma) figure 3. power gain vs. current. 4 5 6 7 8 9 g p (db) 20 40 50 60 70 30 6 7 8 11 12 13 ?5 0 +25 +55 +85 7 8 9 p 1 db (dbm) nf (db) nf g p (db) temperature ( c) figure 4. output power at 1 db gain compression, nf and power gain vs. case temperature, f = 1.0 ghz, i d =50ma. p 1 db g p 0.1 0.2 0.3 0.5 2.0 1.0 4.0 frequency (ghz) figure 5. output power at 1 db gain compression vs. frequency. 3 6 9 12 15 18 21 p 1 db (dbm) i d = 70 ma i d = 30 ma i d = 50 ma 6.0 5.5 6.5 7.0 7.5 frequency (ghz) figure 6. noise figure vs. frequency. 0.1 0.2 0.3 0.5 2.0 1.0 nf (db) i d = 30 ma i d = 50 ma i d = 70 ma 0.1 ghz 1.0 ghz 2.0 ghz
www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies 5965-9577e (11/99) 85 plastic package dimensions 1 3 4 2 5 typ. 45 ground ground rf output and bias rf input .085 2.15 .286 .030 7.36 .76 notes: (unless otherwise specified) 1. dimensions are in 2. tolerances in .xxx = 0.005 mm .xx = 0.13 mm .020 .51 .07 0.43 .060 .010 1.52 .25 .006 .002 .15 .05 0.143 0.015 3.63 0.38 a04
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